2SD669A Datasheet

2SD669A

Datasheet specifications

Datasheet's name 2SD669A
File size 42.261 KB
File type pdf
Number of pages 6

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2SD669A 2 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2SD669A
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 1W
  • Transition Frequency (fT): 140MHz
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,5V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@500mA,50mA
  • Package: TO-126
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.

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